The BGS15MU14 RF CMOS switch is specifically designed for LTE and 5G feedback receive applications. It offers high isolation ,low insertion loss and low harmonic generation up to 6 GHz.It is controlled via a MIPI RFFE controller. The on-chip controller allows power-supply voltages from 1.65 to 1.95 V. Unlike GaAs technology, external DC blocking capacitors at the RF Ports are only required if DC voltage is applied externally. The BGS15MU14 RF Switch is manufactured using Infineon’s patented MOS technology, offering the performance of GaAs with the economy and integration of conventional CMOS including the inherent higher ESD robustness. The device has a very small size of only 1.9 x 1.5 mm2 and a maximum thickness of 0.6 mm.
